• 文献标题:   On the applicability of the two-band model to describe transport across n-p junctions in bilayer graphene
  • 文献类型:   Article
  • 作  者:   POOLE CJ
  • 作者关键词:   graphene, tunneling, electronic transport
  • 出版物名称:   SOLID STATE COMMUNICATIONS
  • ISSN:   0038-1098
  • 通讯作者地址:   Univ Lancaster
  • 被引频次:   16
  • DOI:   10.1016/j.ssc.2009.12.032
  • 出版年:   2010

▎ 摘  要

We extend the low-energy effective two-band Hamiltonian for electrons in bilayer graphene (McCann and Fal'ko (2006) [1]) to include a spatially dependent electrostatic potential. We find that this Hamiltonian contains additional terms, as compared to the one used earlier in the analysis of electronic transport in n-p junctions in bilayers (Katsnelson and Novoselov (2006) [3]). However, for potential steps vertical bar u vertical bar < gamma(1) (where gamma(1) is the interlayer coupling), the corrections to the transmission probability due to such terms are small. For the angle-dependent transmission T(theta) we find T(theta) congruent to sin(2) (2 theta) - (2u/3 gamma(1)) sin(4 theta) sin(theta), which slightly increases the Fano factor: F congruent to 241 for u = 40 meV. (C) 2009 Elsevier Ltd. All rights reserved.