• 文献标题:   Voltage-reduced low-defect graphene oxide: a high conductivity, near-zero temperature coefficient of resistance material
  • 文献类型:   Article
  • 作  者:   SILVERSTEIN KW, HALBIG CE, MEHTA JS, SHARMA A, EIGLER S, MATIVETSKY JM
  • 作者关键词:  
  • 出版物名称:   NANOSCALE
  • ISSN:   2040-3364 EI 2040-3372
  • 通讯作者地址:   SUNY Binghamton
  • 被引频次:   5
  • DOI:   10.1039/c8nr08285e
  • 出版年:   2019

▎ 摘  要

A highly conductive graphene derivative was produced by using a low-defect form of graphene oxide, oxo-G, in conjunction with voltage-reduction, a simple and environmentally-benign procedure for removing oxygen-containing functional groups. A low temperature coefficient of resistance was achieved, making this material promising for temperature-stable electronics and sensors.