▎ 摘　　要

We fabricate the graphene/h-BN stacked mechanical resonator and investigate the gate voltage dependence of the resonance property of the graphene/h-BN mechanical resonator. The mode splitting on the resonance of the stacked resonator is found at a specific gate voltage region, where the frequency difference of two peaks corresponding to two modes showed the square of gate voltage dependence. This implies that the mode splitting observed is that the electrostatic attraction on the graphene layer influences the interlayer interaction of graphene and h-BN. The energy transfer between the two resonance states was also observed.