▎ 摘　　要

The quantum Goos-Hanchen effect and the quantum transport characteristic in strained graphene are investigated. The Goos-Hanchen phase shift and the conductance are derived by solving the Dirac eigenvalue differential equation. The effects of both the induced photon of the applied AC-field and magnetic field are taken into consideration. Results show that the phase shift and the conductance vary with the shear strain under the effect of both photons of the induced AC-field and the magnetic field. This variation is due to the breaking symmetry of the band-structure in strained graphene. In the present paper, our calculation of strain induced energy gap variations in graphene can be technological relevance. The present research is very important for sensing strain in nanostructured materials.