▎ 摘　　要

A simple and efficient method to repair defects in graphene oxide (GO) is reported, accompanied by a simultaneous reduction process by a methane plasma. The graphene after repair is of high quality. For a typical monolayer after repair and reduction, the minimum sheet resistance at the Dirac point and the Raman DIG peak intensity ratio are about 9.0 k Omega/rectangle and similar to 0.53, respectively. (C) 2012 Elsevier Ltd. All rights reserved.