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  • 文献标题:   Improved photoelectronic performance of graphene, polymer and PbSe quantum dot infrared photodetectors
  • 文献类型:   Article
  • 作　　者:   SONG XX, ZHANG YT, ZHANG HT, YU Y, CAO MX, CHE YL, WANG JL, YANG JB, DING X, YAO JQ
  • 作者关键词:   graphene, polymer, pbse quantum dot, multilayer structure, fieldeffect phototransistor, infrared
  • 出版物名称:   MATERIALS LETTERS
  • ISSN:   0167-577X EI 1873-4979
  • 通讯作者地址:   Tianjin Univ
  • 被引频次:   4
  • DOI:   10.1016/j.matlet.2016.04.202
  • 出版年:   2016

▎ 摘　　要

We fabricated a highly sensitive infrared (IR) layer-heterojunction field effect phototransistor (LH-FEpT) by integrating poly [2-methoxy-5-(20-ethylhexyloxy-p-phenylenevinylene)] (MEH-PPV)/PbSe quantum dots composite with monolayer graphene. The phototransistor exhibited high photosensitive in a wide spectral range from visual to infrared. The graphene/MEH-PPV/PbSe QDs based FEpT (GMQ-FEpT) show high carrier mobility (mu) up to 1800 cm(2) V-1 s(-1), high photo responsivity (R) about 133 A/W at a light intensity (4.9 mW/cm(2)), high external quantum efficiency (EQE) (up to 2 x 10(4)%) and high specific detectivity (D*) (9.8 x 10(10) Jones) under illumination of 808 nm laser. (C) 2016 Elsevier B.V. All rights reserved.