▎ 摘　　要

High-resolution transmission electron microscopy has revealed the formation process of graphene layers on SiC (0 0 0 1). Initially, nucleation occurs at SiC steps, covering them with a few layers of graphene. These curved graphene layers stand almost perpendicularly on the lower terrace. Graphene subsequently grows over the terrace region. The growth is often pinned by lattice defects of the SiC substrate. (C) 2009 Elsevier B.V. All rights reserved.