▎ 摘　　要

We present here the effect of grain boundaries on the charge transport properties of quasi-2D graphene/PVDF nanocomposite (QGN)-based field-effect transistor (QGN-FET) devices with active thermal management. Scanning tunneling microscopy (STM) has been employed to explore the grain-boundary formation across the slow-scan directions at 10 mV. The average device capacitance of the QGN turns out to be around 1.5 nF with a mean extinction ratio of 51 dB, making it amicable, especially for storage applications. However, thermal device designing remains often challenging for achieving better-performance nanoscale transistors. Utilizing electrostatic analysis, the I- V characteristics along with the carrier density and the temperature effect in QGN-FET were realized, while the thermal bistability at V-GS = 25 V. Our finite-element analysis, on the other hand, suggests that the thermal energy can provide more pathways for heat propagation at 25 V. Thus, reducing the hotspot temperature would increase, otherwise monotonically, with the associated heat flux.