• 文献标题:   Side-dependent electron escape from graphene- and graphane-like SiC layers
  • 文献类型:   Article
  • 作  者:   GORI P, PULCI O, MARSILI M, BECHSTEDT F
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951
  • 通讯作者地址:   Univ Roma Tor Vergata
  • 被引频次:   29
  • DOI:   10.1063/1.3679175
  • 出版年:   2012

▎ 摘  要

The structural and electronic properties of SiC-based two-dimensional (2D) crystals are studied by means of density functional theory and many-body perturbation theory. Such properties cannot simply be interpolated between graphene and silicene. The replacement of half of the C atoms by Si atoms opens a large direct electronic gap and destroys the Dirac cones. Hydrogenation further opens the gap and significantly reduces the electron affinity to 0.1 or 1.8 eV in dependence on the carbon or silicon termination of the 2D crystal surface, thus showing a unique direction dependent ionization potential. This suggests the use of 2D-SiC:H as electron or hole filter. (C) 2012 American Institute of Physics. [doi:10.1063/1.3679175]