• 文献标题:   Scanning Noise Microscopy on Graphene Devices
  • 文献类型:   Article
  • 作  者:   SUNG MG, LEE H, HEO K, BYUN KE, KIM T, SEO DH, SEO S, HONG S
  • 作者关键词:   atomic force microscopy, scanning noise microscopy, lowfrequency noise, graphene strip, nanodevice
  • 出版物名称:   ACS NANO
  • ISSN:   1936-0851 EI 1936-086X
  • 通讯作者地址:   Seoul Natl Univ
  • 被引频次:   16
  • DOI:   10.1021/nn202135g
  • 出版年:   2011

▎ 摘  要

We developed a scanning noise microscopy (SNM) method and demonstrated the nanoscale noise analysis of a graphene strip-based device. Here, a Pt tip made a direct contact on the surface of a nanodevice to measure the current noise spectrum through it. Then, the measured noise spectrum was analyzed by an empirical model to extract the noise characteristics only from the device channel. As a proof of concept, we demonstrated the scaling behavior analysis of the noise in graphene strips. Furthermore, we performed the nanoscale noise mapping on a graphene channel, allowing us to study the effect of structural defects on the noise of the graphene channel. The SNM method is a powerful tool for nanoscale noise analysis and should play a significant role in basic research on nanoscale devices.