▎ 摘　　要

The H-2-induced etching of low-dimensional materials is of significant interest for controlled architecture design of crystalline materials at the micro-and nanoscale. This principle is applied to the thinnest crystalline etchant, graphene. In this study, by using a high H-2 concentration, the etched hexagonal holes of copper quantum dots (Cu QDs) were formed and embedded into the large-scale graphene region by low-pressure chemical vapor deposition on a liquid Cu/W surface. With this procedure, the hexagon flower-etched Cu patterns were formed in a H-2 environment at a higher melting temperature of Cu foil (1090 degrees C). The etching into the large-scale graphene was confirmed by optical microscopy, atomic force microscopy, scanning electron microscopy, and Raman analysis. This first observation could be an intriguing case for the fundamental study of low-dimensional material etching during chemical vapor deposition growth; moreover, it may supply a simple approach for the controlled etching/growth. In addition, it could be significant in the fabrication of controllable etched structures based on Cu QD patterns for nanoelectronic devices as well as in-plane heterostructures on other low-dimensional materials in the near future.