▎ 摘　　要

Pure Ni film is the first metal catalyst that can generate graphene with small domains and variable thickness across the film. The lack of control over layer number is attributed to the high carbon solubility of Ni. We designed a combinatorial Ni/Si system, which enables the direct growth of monolayer graphene via chemical vapor deposition method. In this system, Si was introduced as the carbon diffusion barriers to prevent carbon diffusing into Ni film. The designed system fully overcomes the fundamental limitations of Ni and provides a facile and effective strategy to yield homogenous monolayer graphene over large area. The field effect transistors were fabricated and characterized to determine the electrical properties of the synthesized graphene film. Furthermore, this technique can utilize standard equipments available in semiconductor technology. (C) 2014 AIP Publishing LLC.