• 文献标题:   The Kondo effect in reduced graphene oxide films
  • 文献类型:   Article
  • 作  者:   MCINTOSH R, BHATTACHARYYA S
  • 作者关键词:   graphene oxide, electronic transport, kondo effect, metalinsulator transition, magnetoresistance
  • 出版物名称:   PHYSICA STATUS SOLIDIRAPID RESEARCH LETTERS
  • ISSN:   1862-6254 EI 1862-6270
  • 通讯作者地址:   Univ Witwatersrand
  • 被引频次:   4
  • DOI:   10.1002/pssr.201105493
  • 出版年:   2012

▎ 摘  要

The influence of spin in reduced graphene oxide (RGO) is demonstrated through a temperature dependent metal-insulator transition in resistance (at similar to 30 K) as well as high field magneto-resistance (MR) measurements. RGO samples, prepared using an unconventional organic acid reduction method, showed a quadratic temperature dependence of resistance at low temperatures, which changed to a logarithmic dependence at higher temperatures. Analysis of these features in RGO, combined with negative MR which scales with a Kondo characteristic temperature, establishes the interaction between conduction electrons propagating through intact graphene nano-islands and localized magnetic moments found in disordered regions. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim