▎ 摘　　要

The formation of graphene on the SiC(000 (1) over bar) surface (the C-face of the {0001} surfaces) has been studied, utilizing both disilane and neon environments. In both cases, the interface between the graphene and the SiC is found to be different than for graphene formation in vacuum. A complex low-energy electron diffraction pattern with root 43 x root 43-R +/- 7.6 degrees symmetry is found to form at the interface. An interface layer consisting essentially of graphene is observed, and it is argued that the manner in which this layer covalently bonds to the underlying SiC produces the root 43 x root 43-R +/- 7.6 degrees structure [i.e., analogous to the 6 root 3 x 6 root 3-R30 degrees "buffer layer" that forms on the SiC(0001) surface (the Si-face)]. Oxidation of the surface is found to modify (eliminate) the root 43 x root 43-R +/- 7.6 degrees structure, which is interpreted in the same manner as the known "decoupling" that occurs for the Si-face buffer layer. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4718365]