• 文献标题:   Epitaxy of obliquely aligned GaN nanorods on vertically oriented graphene nanosheets for transparent flexible piezoelectric nanogenerators
  • 文献类型:   Article
  • 作  者:   TSAI SJ, WU CL, TSAI NT, WONG SS, TU LW
  • 作者关键词:   flexible electronic, nanorods/nanowire, graphene, nanogenerator, transfer, piezoelectric
  • 出版物名称:   CARBON
  • ISSN:   0008-6223 EI 1873-3891
  • 通讯作者地址:   Natl Cheng Kung Univ
  • 被引频次:   2
  • DOI:   10.1016/j.carbon.2017.12.118
  • 出版年:   2018

▎ 摘  要

Transparent flexible piezoelectrics are important for a variety of applications, including piezoelectric transistors, nanogenerators, self-powered nano/biosensors, and piezo-phototronic effect enhanced solar cells and light-emitting diodes. Moreover, obliquely aligned nanorods (NRs) maximize NR deformation, enhancing the piezoelectric potential for applications involving piezoelectric, piezotronic, and piezo-phototronic effects. However, directly transferring one-dimensional semiconductor arrays onto transparent flexible substrates has been challenging. Herein, we report an efficient approach for growing and transferring a large area of obliquely aligned single-crystalline GaN NRs using vertically oriented graphene (VG) nanosheets. We demonstrated the high performance of transparent flexible vertically integrated nanogenerators (VINGs) embedded within the transferred obliquely aligned GaN NRs. The results indicated that nanocrystalline graphene was an excellent platform to epitaxy and transfer high-quality II-VI and III-V nanostructures for flexible, three-dimensional stacked electronics and to enhance the piezoelectric, piezotronic, and piezo-phototronic performance of piezoelectric nanostructure-based devices. (c) 2018 Elsevier Ltd. All rights reserved.