• 文献标题:   Atomic structure and defect dynamics of monolayer lead iodide nanodisks with epitaxial alignment on graphene
  • 文献类型:   Article
  • 作  者:   SINHA S, ZHU TS, FRANCELANORD A, SHENG YW, GROSSMAN JC, PORFYRAKIS K, WARNER JH
  • 作者关键词:  
  • 出版物名称:   NATURE COMMUNICATIONS
  • ISSN:   2041-1723
  • 通讯作者地址:   Univ Texas Austin
  • 被引频次:   4
  • DOI:   10.1038/s41467-020-14481-z
  • 出版年:   2020

▎ 摘  要

Lead Iodide (PbI2) is a large bandgap 2D layered material that has potential for semiconductor applications. However, atomic level study of PbI2 monolayer has been limited due to challenges in obtaining thin crystals. Here, we use liquid exfoliation to produce monolayer PbI2 nanodisks (30-40nm in diameter and>99% monolayer purity) and deposit them onto suspended graphene supports to enable atomic structure study of PbI2. Strong epitaxial alignment of PbI2 monolayers with the underlying graphene lattice occurs, leading to a phase shift from the 1T to 1H structure to increase the level of commensuration in the two lattice spacings. The fundamental point vacancy and nanopore structures in PbI2 monolayers are directly imaged, showing rapid vacancy migration and self-healing. These results provide a detailed insight into the atomic structure of monolayer PbI2, and the impact of the strong van der Waals interaction with graphene, which has importance for future applications in optoelectronics.