▎ 摘　　要

This research intends to develop an analytical model for a heterojunction graphene nanoribbon double-gate tunnel field-effect transistor with a stacked SiO2/HfO2 layer. Embodying indium antimony as the source material and silicon as both channel and drain material results in a heterojunction that helps in improving the proposed device's performance. A graphene nanoribbon is inserted beneath the SiO2 layer to improve the band tunneling generation rate. To study the device characteristics like ON and OFF current of the TFET, an analytical model based on the two-dimensional (2D) nonlinear Poisson equation and parabolic approximation method is developed. The proposed model is validated using a 2D technology computer-aided design numerical device simulator, and the device parameters such as surface potential, electric field, and drain current are substantiated with the analytical data.