• 文献标题:   Highly p-doped epitaxial graphene obtained by fluorine intercalation
  • 文献类型:   Article
  • 作  者:   WALTER AL, JEON KJ, BOSTWICK A, SPECK F, OSTLER M, SEYLLER T, MORESCHINI L, KIM YS, CHANG YJ, HORN K, ROTENBERG E
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   EO Lawrence Berkeley Natl Lab
  • 被引频次:   99
  • DOI:   10.1063/1.3586256
  • 出版年:   2011

▎ 摘  要

We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p approximate to 4.5 x 10(13) cm(-2), equivalent to the location of the Fermi level at 0.79 eV above the Dirac point E-D. (C) 2011 American Institute of Physics. [doi:10.1063/1.3586256]