▎ 摘　　要

In this paper, we demonstrate an ultraviolet photodetector (UV-PD) that uses coalesced gallium nitride (GaN) nanorods (NRs) on a graphene/Si (111) substrate grown by plasma-assisted molecular beam epitaxy. We report a highly sensitive, self-powered, and hybrid GaN NR/graphene/Si (111) PD with a relatively large 100mm(2) active area, a high responsivity of 17.4A/W, a high specific detectivity of 1.23x10(13) Jones, and fast response speeds of 13.2/13.7 mu s (20kHz) under a UV light of 355nm at zero bias voltage. The results show that the thin graphene acts as a perfect interface for GaN NRs, encouraging growth with minimum defects on the Si substrate. Our results suggest that the GaN NR/graphene/Si (111) heterojunction has a range of interesting properties that make it well-suited for a variety of photodetection applications.