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  • 文献标题:   Improving graphene non-volatile memory using self-aligned gate
  • 文献类型:   Article
  • 作　　者:   LEE K, KIM O
  • 作者关键词:   graphene device, graphene, randomaccess storage, graphene nonvolatile memory, channel resistance, iv characteristic, selfaligned gate structure, drain current, transfer characteristic, current 0, 16 ma to 0, 28 ma, current 0, 35 ma to 0, 72 ma, voltage 8, 5 v, voltage 6, 7 v
  • 出版物名称:   ELECTRONICS LETTERS
  • ISSN:   0013-5194 EI 1350-911X
  • 通讯作者地址:   POSTECH
  • 被引频次:   2
  • DOI:   10.1049/el.2015.4274
  • 出版年:   2016

▎ 摘　　要

As the scale of graphene-based non-volatile memory is reduced, the ratio of access resistance R-A to total channel resistance R-TOT is increased. To investigate the effect of the R-A on I-V characteristics, we fabricated devices with various access lengths L-A and self-aligned structure. Proposed structure using self-aligned gate minimises L-A, and thereby improves the drain current, on/off' current ratio I-ON/I-OFF and transfer characteristics. In proposed structure, off' current is increased from 0.16 to 0.28 mA because R-TOT was reduced; on' current increased from 0.35 to 0.72 mA, but I-ON/I-OFF increased from 2.18 to 2.57. Proposed structure also had larger memory window (8.5 V) than did conventional devices (6.7 V).