• 文献标题:   Behavior of implanted Xe, Kr and Ar in nanodiamonds and thin graphene stacks: experiment and modeling
  • 文献类型:   Article
  • 作  者:   SHIRYAEV AA, TRIGUB AL, VORONINA EN, KVASHNINA KO, BUKHOVETS VL
  • 作者关键词:  
  • 出版物名称:   PHYSICAL CHEMISTRY CHEMICAL PHYSICS
  • ISSN:   1463-9076 EI 1463-9084
  • 通讯作者地址:  
  • 被引频次:   0
  • DOI:   10.1039/d1cp02600c EA SEP 2021
  • 出版年:   2021

▎ 摘  要

Implantation and subsequent behaviour of heavy noble gases (Ar, Kr, and Xe) in few-layer graphene sheets and in nanodiamonds are studied both using computational methods and experimentally using X-ray absorption spectroscopy. X-ray absorption spectroscopy provides substantial support for Xe-vacancy (Xe-V) defects as main sites for Xe in nanodiamonds. It is shown that noble gases in thin graphene stacks distort the layers, forming bulges. The energy of an ion placed in between flat graphene sheets is notably lower than that in domains with high curvature. However, if the ion is trapped in the curved domain, considerable additional energy is required to displace it. This phenomenon is likely responsible for strong binding of noble gases implanted into disordered carbonaceous phase in meteorites (the Q-component).