• 文献标题:   Fabrication of a single layer graphene by copper intercalation on a SiC(0001) surface
  • 文献类型:   Article
  • 作  者:   YAGYU K, TAJIRI T, KOHNO A, TAKAHASHI K, TOCHIHARA H, TOMOKAGE H, SUZUKI T
  • 作者关键词:  
  • 出版物名称:   APPLIED PHYSICS LETTERS
  • ISSN:   0003-6951 EI 1077-3118
  • 通讯作者地址:   Fukuoka Univ
  • 被引频次:   20
  • DOI:   10.1063/1.4864155
  • 出版年:   2014

▎ 摘  要

Cu atoms deposited on a zero layer graphene grown on a SiC(0001) substrate, intercalate between the zero layer graphene and the SiC substrate after the thermal annealing above 600 degrees C, forming a Cu-intercalated single layer graphene. On the Cu-intercalated single layer graphene, a graphene lattice with superstructure due to moire pattern is observed by scanning tunneling microscopy, and specific linear dispersion at the (K) over bar point as well as a characteristic peak in a C-1s core level spectrum, which is originated from a free-standing graphene, is confirmed by photoemission spectroscopy. The Cu-intercalated single layer graphene is found to be n-doped. (C) 2014 AIP Publishing LLC.