▎ 摘　　要

A novel growth method (carbon molecular beam epitaxy (CMBE)) has been developed to produce high-quality and large. area epitaxial graphene. This method demonstrates significantly improved controllability of the graphene growth. CM BE with C(60) produces AB stacked graphene, while growth with the graphite filament results in non-Bernal stacked graphene layers with a Dirac-like electronic structure, which is similar to graphene grown by thermal decomposition on SiC (000-1).