• 文献标题:   Valley filter and valley valve in graphene
  • 文献类型:   Article
  • 作  者:   RYCERZ A, TWORZYDLO J, BEENAKKER CWJ
  • 作者关键词:  
  • 出版物名称:   NATURE PHYSICS
  • ISSN:   1745-2473 EI 1745-2481
  • 通讯作者地址:   Leiden Univ
  • 被引频次:   953
  • DOI:   10.1038/nphys547
  • 出版年:   2007

▎ 摘  要

The potential of graphene for carbon electronics rests on the possibilities offered by its unusual band structure to create devices that have no analogue in silicon-based electronics(1,2). Conduction and valence bands in graphene form conically shaped valleys, touching at a point called the Dirac point. There are two inequivalent Dirac points in the Brillouin zone, related by time-reversal symmetry. Intervalley scattering is suppressed in pure samples(3-5). The independence and degeneracy of the valley degree of freedom suggests that it might be used to control an electronic device(6), in much the same way as the electron spin is used in spintronics(7) or quantum computing(8). A key ingredient for 'valleytronics' would be a controllable way of occupying a single valley in graphene, thereby producing a valley polarization. Here we propose such a valley filter, based on a ballistic point contact with zigzag edges. The polarity can be inverted by local application of a gate voltage to the point contact region. Two valley filters in series may function as an electrostatically controlled valley valve, representing a zero-magnetic-field counterpart to the familiar spin valve.