▎ 摘　　要

We investigated polarization-resolved electronic Raman scattering in different graphitic structures, including bulk graphite and single-layer and few-layer graphene. For all investigated samples, the broad continua of interband electronic transitions were detected at an energy similar to 0.35 eV, while they were expected to be at similar to 6 eV [Phys. Rev. B 88, 085416 ( 2013)]. The symmetry of the observed excitations corresponds to the A(2g) irreducible representation. A quasilinear behavior of the Raman response is observed at low energies in all cases at room temperature, in agreement with performed tight-binding calculations. High-energy features at similar to 0.8 eV are detected in the spectra of graphite and few-layer graphene. They are attributed to interband transitions in the vicinity of the K point, which involve electronic bands split by interlayer interaction. The effects of the substrate type, defect amount, and doping on the continuum line shape and symmetry are discovered. The silent layer-breathing mode is observed in a single-layer graphene. The results evidence that the electronic light scattering in graphitic structures without an external magnetic field is a powerful tool, which provides a variety of data on the structure and symmetry of low-energy electronic excitations.