• 文献标题:   Approach for MVL design based on armchair graphene nanoribbon field effect transistor and arithmetic circuits design
  • 文献类型:   Article
  • 作  者:   NAYERI M, KESHAVARZIAN P, NAYERI M
  • 作者关键词:   band gap energy, circuit design, gnrfet, ternary inverter, threshold voltage
  • 出版物名称:   MICROELECTRONICS JOURNAL
  • ISSN:   0026-2692 EI 1879-2391
  • 通讯作者地址:   Islamic Azad Univ
  • 被引频次:   0
  • DOI:   10.1016/j.mejo.2019.07.017
  • 出版年:   2019

▎ 摘  要

This paper presents the approach for multiple-valued logic (MVL) design and implementing the arithmetic circuit based on armchair graphene nanoribbon field effect transistors (GNRFETs). For this purpose, the values of the threshold voltages are obtained for GNRFETs for utilizing in MVL. The I-d-V-gs curve is drawn for all n-type GNRFETs by Synopsys HSPICE tools. Moreover, the width variations and band gap energy are scrutinized. The value of threshold voltage for range of N = 3p+1 is more than N = 3p. These observations exhibit that variation of the threshold voltages can be utilized for a circuit design based on GNRFET. Furthermore, the sub-threshold swing is obtained. As a proof of the concept, the ternary arithmetic circuits based on GNR are designed with 0.5 V supply voltage. The computational results confirm the threshold voltages values as well as the suitable figure of merits of using GNRFETs in multiple-valued logic circuit design.