• 文献标题:   Gate-Tunable Magnetism and Giant Magnetoresistance in Suspended Rhombohedral-Stacked Few-Layer Graphene
  • 文献类型:   Article, Early Access
  • 作  者:   LEE Y, CHE S, VELASCO J, GAO XS, SHI YM, TRAN D, BAIMA J, MAURI F, CALANDRA M, BOCKRATH M, LAU CN
  • 作者关键词:   keywords, rhombohedralstacked fewlayer graphene, halfmetallicity, fl atband magnetism, magnetoresistance
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:  
  • 被引频次:   4
  • DOI:   10.1021/acs.nanolett.2c00466 EA JUN 2022
  • 出版年:   2022

▎ 摘  要

ABSTRACT: Conventionally, magnetism arises from the strong exchange interaction among the magnetic moments of d- or f-shell electrons. It can also emerge in perfect lattices from nonmagnetic elements, such as that exemplified by the Stoner criterion. Here we report tunable magnetism in suspended rhombohedral-stacked few-layer graphene (r-FLG) devices with fiat bands. At small doping levels (n ??? 1011 cm???2), we observe prominent conductance hysteresis and giant magnetoconductance that exceeds 1000% as a function of magnetic fields. Both phenomena are tunable by density and temperature and disappear at n > 1012 cm???2 or T > 5 K. These results are confirmed by firstprinciples calculations, which indicate the formation of a half-metallic state in doped r-FLG, in which the magnetization is tunable by electric field. Our combined experimental and theoretical work demonstrate that magnetism and spin polarization, arising from the strong electronic interactions in fiat bands, emerge in a system composed entirely of carbon atoms.