▎ 摘　　要

The valley Hall conductivity, having opposite signs between the K and KA valleys, is calculated in disordered bilayer graphene in the presence of gate electric field. Numerical calculations are performed within a self-consistent Born approximation for scatterers with Gaussian potential and for charged impurities. The results show that the valley Hall conductivity is much enhanced as compared to that in the ideal case without scatterers, remains appreciable in the presence of large disorder, and exhibits double-peak structure near zero energy.