▎ 摘　　要

Graphene on a SiO2/Si substrate was removed by ultraviolet pulsed laser irradiation. Threshold laser power density to remove graphene depended on the graphene thickness. The mechanism is discussed using kinetic energy of thermal expansion of the substrate surface. Utilizing the thickness dependence, thickness (or layer-number) selective process for graphene is demonstrated. Maskless patterning of graphene using laser irradiation in the air is also demonstrated. (C) 2015 Elsevier B.V. All rights reserved.