• 文献标题:   Disorder effect on the integer quantum Hall effect in trilayer graphene
  • 文献类型:   Article
  • 作  者:   TIAN HY, MA R, CHAN KS, WANG J
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Southeast Univ
  • 被引频次:   1
  • DOI:   10.1088/0953-8984/25/49/495503
  • 出版年:   2013

▎ 摘  要

We numerically investigate the disorder effect on the integer quantum Hall effect in a trilayer graphene (TLG) system by use of the Kubo formula. For a clean sample, both Bernal (ABA) and rhombohedral (ABC) stacked TLGs display the same quantum rule with abnormal quantized Hall plateaus sigma(xy) = ve(2) = h (v = +/- 6, +/- 10, +/- 14,...) in the band center and normal quantized Hall plateaus at the band edges. In the presence of disorder, the Hall plateaus become obscure and the higher plateaus disappear first with the increase of the disorder; however, the Hall plateaus of the ABA-stacked TLG are destroyed more readily in comparison with the ABC-stacked one. The longitudinal conductance minimums of the system corresponding to the Hall plateaus become narrower and thinner with disorder, and those of the ABC- stacked TLG are comparatively more stable than those of the ABA structure. The findings indicate that the l = 3 chiral quasiparticles with cubic energy dispersion in ABC- stacked TLG have comparatively stronger immunity to the disorder than the l = 1 and 2 chiral quasiparticles in the ABA counterpart.