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  • 文献标题:   Doping of graphene for the application in nano-interconnect
  • 文献类型:   Article
  • 作　　者:   WU XY, ASSELBERGHS I, POLITOU M, CONTINO A, RADU I, HUYGHEBAERT C, TOKEI Z, SOREE B, DE GENDT S, DE FEYTER S, HEYNS M
  • 作者关键词:   graphene, nanointerconnect, doping, mobility, sheet resistance
  • 出版物名称:   MICROELECTRONIC ENGINEERING
  • ISSN:   0167-9317 EI 1873-5568
  • 通讯作者地址:   Katholieke Univ Leuven
  • 被引频次:   8
  • DOI:   10.1016/j.mee.2016.10.013
  • 出版年:   2017

▎ 摘　　要

Graphene is considered as potential candidate for future nano-interconnects. In this respect we study the Bronsted acid doping effect of single layer graphene (SLG) and few layer graphene (FLG) synthesized by chemical vapor deposition (CVD). A sheet resistance reduction of 50% is achieved by HNO3 doping of SLG, and the resulting resistivity of 9.1 mu Omega.cm is comparable to alternative metals to copper (e.g. Ru). On the other hand, synthetic FLG shows higher sheet resistance due to higher defect density. Mobility degradation at increased carrier concentration is a main limiting factor for sheet resistance reduction of CVD graphene. (C) 2016 Elsevier B.V. All rights reserved.