▎ 摘　　要

The growth of graphene on Ge(001) via chemical vapor deposition can be highly anisotropic, affording the facile synthesis of crystallographically controlled, narrow, long, oriented nanoribbons of graphene that are semiconducting, whereas unpatterned continuous graphene is semimetallic. This bottom-up growth overcomes long-standing challenges that have limited top-down ribbon fabrication (e.g., inadequate resolution and disordered edges) and yields ribbons with long segments of smooth armchair edges. The charge transport characteristics of sub-10 nm ribbons synthesized by this technique (which are expected to have band gaps sufficiently large for semiconductor electronics applications) have not yet been characterized. Here, we show that sub-10 nm nanoribbons grown on Ge(001) can simultaneously achieve a high on/off conductance ratio of 2 X 10(4) and a high on-state conductance of 5 mu S in field-effect transistors, favorably comparing to or exceeding the performance of nanoribbons fabricated by other methods. These promising results demonstrate that the direct synthesis of nanoribbons on Ge(001) could provide a scalable pathway toward the practical realization of high-performance semiconducting graphene electronics, provided that the width uniformity and positioning of the nanoribbons are improved.