▎ 摘　　要

In this paper, systematic design and analysis of thin-film graphene-silicon solar cells with the addition of an anti-reflection coating (ARC), hexagonal boron nitride (h-BN) interlayer and decorated with Au/Ag NPs infused in rear ZnO:Al buffer layer is reported. The 3D NPs are located on the top and rear side of the solar cell. Initially, we simulated a reference 2D graphene-silicon solar cell with highest simulated short circuit current density (Jsc) 30mA/ cm(2) and power conversion efficiency (PCE) of 10.65%. Using 2D and 3D full vectorial finite element method (FVFEM) simulations, we significantly improved the Jsc by 6.2mA/ cm(2) from 30mA/cm 2 to 36.21mA/cm(2) and PCE from 10.93% to 12.03%. We utilized a patterned graphene sheet with small nanoholes to increase surface and optical conductivity. Plasmonic NPs embedded in a graphene-silicon solar cell to increase plasmonic resonance effects is investigated. The 3D position of the patterned graphene, rear buffer layer stack, size, shape, and periodicity of NPs were well-controlled and analyzed under certain parametric variation conditions. Ag NPs located inside textured ZnO:Al detached to metal contact and small periodic Au NPs decorated beneath a h-BN interlayer lead to highly efficient light confinement and increase photon current generation. The proposed device exhibits 12.03% PCE, maximum light absorption over 80% and high overall quantum efficiency (QE). Furthermore, this structure offers major light trapping advantages, including significant EM light propagation throughout the solar cell structure. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement