▎ 摘　　要

Theintegration of graphene in spintronics applications requiresits close contact with ferromagnetic materials, promoting effectivespin injection. At the same time, the linear energy vs wave-vectordependence for the charge carriers in the vicinity of the Fermi levelfor graphene has to be conserved. Here, motivated by recent theoreticalpredictions, we present the experimental realization on the synthesisof graphene/ferromagnetic-Mn5Ge3/semiconducting-Geheterostructures using the intercalation of Mn in the epitaxial graphene/Geinterfaces. Different in situ and ex situ methods confirm the formationof such heterosystems, where graphene is in close contact with ferromagneticMn(5)Ge(3), as the Curie temperature reaches roomtemperature. Despite the expected small distance between grapheneand Mn5Ge3 causing the strong interaction atinterfaces, our angle-resolved photoelectron spectroscopy experimentsfor the formed graphene/Mn5Ge3 interfaces confirmthe linear band dispersion around the Fermi level for the carriersin graphene. These findings open up an interesting perspective forthe integration of graphene in modern semiconductor technology withpossible implications for spintronics device fabrication.