▎ 摘　　要

The growth process of graphene structure on 6H-SiC(000 (1) over bar) surface has been studied using the classical molecular dynamics (MD) simulation and the simulated annealing technique. We show that carbon atoms of the 6H-SiC(000 (1) over bar) subsurface after sublimation of Si atoms can be self-organized to form local monolayer graphene structures. This process is similar to the formation of graphene on the 6H-SiC(0001) surface, depending strongly on annealing temperature and coverage of carbon atoms on the SiC (000 (1) over bar surface. The local graphene structures can be formed on 6H-SiC(000 (1) over bar )as the annealing temperature is around 1400 K. This transformation temperature is in good agreement with experimental observations (1080 degrees C) but is lower than that of growing graphene on SiC(0001) surface (T approximate to 1450 K). In addition, not only single layer but also bilayer graphene structure can be formed, associated with the increase of the coverage of carbon atoms on SiC(000 (1) over bar )surface.