• 文献标题:   Quantum Hall boundary state around the line defect in graphene
  • 文献类型:   Article
  • 作  者:   YAO HB, LU XL, ZHENG YS
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Jilin Univ
  • 被引频次:   9
  • DOI:   10.1103/PhysRevB.88.235419
  • 出版年:   2013

▎ 摘  要

Within the continuum model, i.e., the Dirac equation approach, we study the boundary states around the line defect in graphene in the quantum Hall regime. We find that the boundary states localize at the opposite sides of the line defect if they propagate toward the opposite directions. Meanwhile, some boundary states show simultaneously the valley and sublattice polarizations. In addition, a pseudomagnetic field induced by an inhomogeneous strain field, in place of the real magnetic field, can drive the line defect embedded graphene to the quantum valley Hall regime, due to the occurrence of the valley polarized boundary states.