▎ 摘　　要

This paper presents a physics-.based model and cbarapteristica, of drain current, fieldi,yelocity, electron 'density with-variation of channel I length of graphdne and equivalent capacitive circuit model of field effect tranaiatora. Depending on drift diffusion carrier transport and saturation velocity effects the field effect translator model has!beetf-designed: First, an,:explicit Model has been derived for the drain current. These models have been Simulated and the reaults obtained are in excellent agreement with the;heoterical calculatiOns.