▎ 摘　　要

The simultaneous realization of full valley and spin polarized current is one of the major challenges in the spintronics and valleytronics graphene devices. In this paper, we propose a superlattice of ferromagnetic gapped graphene with spin-orbit coupling (SOC) for the generation of simultaneous remarkable full valley and spin polarized current without need for strain and magnetic vector potential. It is found that a gate-controllable spin and valley polarized current can be achieved by the proposed superlattice device. More importantly, the spin and valley polarizations are oscillatory functions of the gate voltage and the directions of polarized currents can be electrically controlled by changes in the gate voltage, which is crucial for development of multiple-valued logic graphene-based spintronics and valleytronics devices. Furthermore, in case of one barrier structure, we show that at the Fermi energy approaching the spin-orbit energy gap, there is a gate-tunable strong spin-valley filtering effect which is attractive for spin-valley sensing applications.