1. 平台首页
  2. 国际论文信息
  • 文献标题:   Growth of few-layer graphene on SiC at low temperature with the fluorocarbon plasma pre-etching
  • 文献类型:   Article
  • 作　　者:   XU YJ, WU XM, YE C, DENG YH, CHEN T, GE SB
  • 作者关键词:   graphene, dual frequencycapacitively coupled plasma, silicon carbide
  • 出版物名称:   THIN SOLID FILMS
  • ISSN:   0040-6090
  • 通讯作者地址:   Soochow Univ
  • 被引频次:   5
  • DOI:   10.1016/j.tsf.2012.12.013
  • 出版年:   2013

▎ 摘　　要

With the fluorocarbon plasma pre-etching silicon carbide (SiC), a method to prepare few-layer graphene at lower temperature (950 degrees C) by thermal decomposition of SiC was developed. The graphene phase has been found by the X-ray photoelectron spectroscopy and Raman spectroscopy measurement. The planar sheet of carbon atoms was also observed by atomic force microscopy. The results demonstrate that few-layer graphene can form on SiC substrate at low temperature. (C) 2012 Elsevier B. V. All rights reserved.