• 文献标题:   Gate potential-controlled current switching in graphene Y-junctions
  • 文献类型:   Article
  • 作  者:   ARAUJO FRV, DA COSTA DR, LIMA FN, NASCIMENTO ACS, PEREIRA JM
  • 作者关键词:   ballistic transport, graphene, current switch, yjunction, transport propertie, pn junction
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:  
  • 被引频次:   3
  • DOI:   10.1088/1361-648X/ac0f2b
  • 出版年:   2021

▎ 摘  要

In this work we investigate the ballistic transport of electrons through three-terminal graphene-based devices. The system consists of a Y-shaped junction formed by three armchair-edged graphene nanoribbons with a rectangular gate potential applied to one of the output branches, whereby current control can be established by the controlling of the refractive index in graphene p-n junctions. Transport properties are obtained by using the Landauer-Buttiker formalism and the tight-binding model within the nearest-neighbor approximation, which allows the calculation of the conductance as function of the Fermi energy, the applied potential, and the system size, as well as the current density. The results demonstrate that the applied electric field can tune the current transmission between the input and two output leads and, consequently, the proposed system acts as a current switch.