• 文献标题:   Graphene on graphene antidot lattices: Electronic and transport properties
  • 文献类型:   Article
  • 作  者:   GREGERSEN SS, PEDERSEN JG, POWER SR, JAUHO AP
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Tech Univ Denmark
  • 被引频次:   12
  • DOI:   10.1103/PhysRevB.91.115424
  • 出版年:   2015

▎ 摘  要

Graphene bilayer systems are known to exhibit a band gap when the layer symmetry is broken by applying a perpendicular electric field. The resulting band structure resembles that of a conventional semiconductor with a parabolic dispersion. Here, we introduce a bilayer graphene heterostructure, where single-layer graphene is placed on top of another layer of graphene with a regular lattice of antidots. We dub this class of graphene systems GOAL: graphene on graphene antidot lattice. By varying the structure geometry, band-structure engineering can be performed to obtain linearly dispersing bands (with a high concomitant mobility), which nevertheless can be made gapped with a perpendicular field. We analyze the electronic structure and transport properties of various types of GOALs, and draw general conclusions about their properties to aid their design in experiments.