• 文献标题:   Atomic and Electronic Structure of Graphene-Oxide
  • 文献类型:   Article
  • 作  者:   MKHOYAN KA, CONTRYMAN AW, SILCOX J, STEWART DA, EDA G, MATTEVI C, MILLER S, CHHOWALLA M
  • 作者关键词:  
  • 出版物名称:   NANO LETTERS
  • ISSN:   1530-6984 EI 1530-6992
  • 通讯作者地址:   Cornell Univ
  • 被引频次:   737
  • DOI:   10.1021/nl8034256
  • 出版年:   2009

▎ 摘  要

We elucidate the atomic and electronic structure of graphene oxide (GO) using annular dark field imaging of single and multilayer sheets and electron energy loss spectroscopy for measuring the fine structure of C and 0 K-edges in a scanning transmission electron microscope. Partial density of states and electronic plasma excitations are also measured for these GO sheets showing unusual; pi* + sigma* excitation at 19 eV. The results of this detailed analysis reveal that the GO is rough with an average surface roughness of 0.6 nm and the structure is predominantly amorphous due to distortions from sp(3) C-O bonds. Around 40% sp(3) bonding was found to be present in these sheets with measured O/C ratio of 1:5. These sp(2) to sp(3) bond modifications due to oxidation are also supported by ab initio calculations.