▎ 摘　　要

Mono layer and bilayer graphene grown on SiC can be transferred without the need for chemical etchants by using, instead of metal, a water-soluble polymer as a supporting layer for handling graphene during the transfer. Thus, possible unintentional doping by chemical etchants can be avoided. The results of Raman spectroscopy show no significant damage in the transferred monolayer and bilayer graphene. The mobility of the transferred monolayer graphene exceeds 2200 cm(2)V(-1)s(-1) at room temperature, which is comparable to that before the transfer. These results indicate that the etchant-free method achieves damageless transfer of monolayer and bilayer graphene. (C) 2014 The Japan Society of Applied Physics