• 文献标题:   Quantum Linear Magnetoresistance and Shubnikov De-Haas Oscillation in Suspended Wrinkled and Smooth Multilayer Graphene
  • 文献类型:   Article
  • 作  者:   COLEMAN C, MTSUKO D, BOTHA C, SANDROCK C, BHATTACHARYYA S
  • 作者关键词:   multilayered graphene, quantum linear magnetoresistance, shubnikov dehaas oscillation, nanomanipulation
  • 出版物名称:   JOURNAL OF NANOSCIENCE NANOTECHNOLOGY
  • ISSN:   1533-4880 EI 1533-4899
  • 通讯作者地址:   Univ Witwatersrand
  • 被引频次:   2
  • DOI:   10.1166/jnn.2017.13837
  • 出版年:   2017

▎ 摘  要

Quantum linear magnetoresistance (QLMR) and Shubnikov de-Haas oscillations are investigated in suspended multilayer graphene devices developed using a technique involving exfoliation and transfer of graphene using nanomanipulators. Wrinkled multilayer graphene showed QLMR at 300 mK, whereas in smooth few layer graphene Shubnikov-de-Haas oscillation were observed at magnetic fields above 4 T at temperatures below 30 K. The carrier density (n(s)) in the wrinkled graphene is in the range 5.2 x 10(9) cm(-2) (at B similar to 0) to 3.5 x 10(13) cm(-2) (at B = 12 T). The corresponding effective masses are 0.001 m(e) similar to 0 and 0.121 m(e), respectively. At B similar to 12 T the concentration of scatterers (N-i) is similar to 1.02 x 10(14) cm(-2) which is similar to 3n(s). From the analysis of the SdH oscillations we show smooth multilayer graphene devices have a carrier density 1.39-2.85 x 10(12) cm(-2) and effective mass (0.022m(e)