• 文献标题:   Effect of uniaxial strain on the electronic transport through disordered graphene p-n junctions
  • 文献类型:   Article
  • 作  者:   DENG M, WANG YJ, GANG Y, CHEN JF
  • 作者关键词:   uniaxial strain, electronic transport, graphene pn junction
  • 出版物名称:   MODERN PHYSICS LETTERS B
  • ISSN:   0217-9849 EI 1793-6640
  • 通讯作者地址:   Changsha Univ Sci Technol
  • 被引频次:   2
  • DOI:   10.1142/S0217984916503371
  • 出版年:   2016

▎ 摘  要

Using the non-equilibrium Green's function method, we investigated theoretically the electron transport through a disordered graphene p-n junction under a perpendicular magnetic field. A uniaxial strain is applied to the graphene sheet. It is found that the conductance versus the on-site energy of the right electrode exhibits the successive step like structure in the n-n region, however, a zero value plateau followed by the successive oscillation peaks in the p-n region. When the longitudinal or transverse strain is applied, the zero value plateau almost remains intact, while the oscillation peaks are greatly enhanced with increasing the strain strength, and depending on the orientation of the applied strain, the oscillation peaks shift towards the positive or negative energy upon increasing the strain. In the presence of the disorder, the characteristic conductance plateaus emerge at e(2) /h, (3/2)epsilon(2) /h, etc. for the appropriate disorder strength. With the rise of the strain, the original plateau structure is destroyed, instead, the conductance exhibits new plateaus whose amplitude and position strongly depend on the strain strength and direction.