• 文献标题:   Strain-induced suppression of weak localization in CVD-grown graphene
  • 文献类型:   Article
  • 作  者:   MIAO XC, TONGAY S, HEBARD AF
  • 作者关键词:  
  • 出版物名称:   JOURNAL OF PHYSICSCONDENSED MATTER
  • ISSN:   0953-8984 EI 1361-648X
  • 通讯作者地址:   Univ Florida
  • 被引频次:   7
  • DOI:   10.1088/0953-8984/24/47/475304
  • 出版年:   2012

▎ 摘  要

We investigate the magnetic-field-and temperature-dependent transport properties of CVD-grown graphene transferred to a flexible substrate (Kapton) and subjected to externally applied strain. In zero magnetic field, a logarithmic temperature-dependent conductivity correction, resulting from strong electron-electron interaction, becomes weaker with the application of strains as large as 0.6% because of an increased rate of chiral-symmetry-breaking scattering. With the application of a perpendicular magnetic field, we also observe positive magnetoconductance at low temperature (T = 5 K) due to weak localization. This magnetoconductance is suppressed with increasing strain, concomitant with a rapid decrease of the intervalley scattering rate (tau(-1)(i)). Our results are in good agreement with theoretical expectations and are consistent with a strain-induced decoupling between graphene and its underlying Kapton substrate.