• 文献标题:   Large changes of graphene conductance as a function of lattice orientation between stacked layers
  • 文献类型:   Article
  • 作  者:   LEE H, QI YB, KWON S, SALMERON M, PARK JY
  • 作者关键词:   graphene, conductivity, atomic force microscopy, lattice misorientation
  • 出版物名称:   NANOTECHNOLOGY
  • ISSN:   0957-4484 EI 1361-6528
  • 通讯作者地址:   Inst for Basic Sci Korea
  • 被引频次:   1
  • DOI:   10.1088/0957-4484/26/1/015702
  • 出版年:   2015

▎ 摘  要

Using the conductive tip of an atomic force microscope as an electrode, we found that the electrical conductance of graphite terraces separated by steps can vary by large factors of up to 100, depending on the relative lattice orientation of the surface and subsurface layers. This effect can be attributed to interlayer interactions that, when stacked commensurately in a Bernal sequence (ABAB ... ), cause the band gap to open. Misaligned layers, on the other hand, behave like graphene. Angular misorientations of a few degrees were found to cause large increases in the conductance of the top layer, with the maximum occurring around 30 degrees. These results suggest new applications for graphene multilayers by stacking layers at various angles to control the resistance of the connected graphene ribbons in devices.