▎ 摘　　要

Graphene-on-silicon Schottky junction solar cells were prepared with pillar-array-patterned silicon substrate. Such patterned substrate showed an anti-reflective characteristic and led to an absorption enhancement of the solar cell, which showed enhanced performance with short-circuit current density, open-circuit voltage, fill factor, and energy conversion efficiency of 464.86 mV, 14.58 mA/cm(2), 0.29, and 1.96%, respectively. Nitric acid was used to dope graphene film and the cell performance showed a great improvement with efficiency increasing to 3.55%. This is due to the p-type chemical doping effect of HNO3 which increases the work function and the carrier density of graphene. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665404]