• 文献标题:   Valley switch in a graphene superlattice due to pseudo-Andreev reflection
  • 文献类型:   Article
  • 作  者:   BEENAKKER CWJ, GNEZDILOV NV, DRESSELHAUS E, OSTROUKH VP, HERASYMENKO Y, ADAGIDELI I, TWORZYDLO J
  • 作者关键词:  
  • 出版物名称:   PHYSICAL REVIEW B
  • ISSN:   2469-9950 EI 2469-9969
  • 通讯作者地址:   Leiden Univ
  • 被引频次:   5
  • DOI:   10.1103/PhysRevB.97.241403
  • 出版年:   2018

▎ 摘  要

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here, we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene-superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree of freedom playing the role of the valley index. The valley switch is ideal at a symmetry point of the superlattice potential, but remains close to 100% in a broad parameter range.