▎ 摘　　要

Potassium (K)-doped n-type stacked graphene layers were fabricated by repeating wet-transfer process of thermal chemical vapor deposited (CVD) single layer graphene and by dipping the samples in potassium hydroxide (KOH). Peaks due to potassium were confirmed by x-ray photoelectron spectroscopy. It was speculated, from the results of Raman spectroscopy, that stacked two layers were formed. Negative shift of Dirac point was obtained by the KOH treatments, which indicated that the obtained K-doped stacked graphene layers showed n-type conduction. Carrier mobilities were increased by the KOH treatments.